IRG8P60N120KDPBF

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Mfr.Part #
IRG8P60N120KDPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT WITH ULTRAFAST SOFT RECOVER
Stock
21,533
In Stock :
21,533

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Td (on/off) @ 25°C :
40ns/240ns
Current - Collector (Ic) (Max) :
100A
ECCN Code :
EAR99
Gate Charge :
345nC
REACH SVHC :
No SVHC
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 40A
Lead Free :
Lead Free
Height :
20.7mm
Max Collector Current :
60A
Length :
15.87mm
Mount :
Through Hole
Input Type :
Standard
Collector Emitter Breakdown Voltage :
1.2kV
Package / Case :
TO-247-3
Current - Collector Pulsed (Icm) :
120A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-40°C~150°C TJ
RoHS Status :
RoHS Compliant
Element Configuration :
Single
Test Condition :
600V, 40A, 5 Ω, 15V
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
2V
Max Power Dissipation :
420W
Packaging :
Tube
Voltage - Collector Emitter Breakdown (Max) :
1200V
Reach Compliance Code :
Unknown
Switching Energy :
2.8mJ (on), 2.3mJ (off)
Width :
5.31mm
Published :
2014
Reverse Recovery Time :
210 ns
Collector Emitter Saturation Voltage :
1.7V
Number of Pins :
3
Datasheets
IRG8P60N120KDPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG8P60N120KDPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-40°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, IRG8P60N120KDPBF pinout, IRG8P60N120KDPBF datasheet PDF, IRG8P60N120KDPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG8P60N120KDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRG8P60N120KDPBF


IRG8P60N120KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

Description


The IRG8P60N120KDPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The IRG8P60N120KDPBF belongs to an insulated-gate bipolar transistor (IGBT). It is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. A metal-oxide-semiconductor (MOS) gate arrangement controls four alternating layers (P–N–P–N).



Features


? Excellent switching characteristics

? Switching characteristics

? High input impedance

? Requirements for gate drive are reduced

? Circuitry for a small snubber

? Impedance of high input

? Device with a voltage regulator

? Bipolar nature results in increased conduction.

? Safer Working Environment



Applications


? Drive for industrial motors

? UPS

? Inverters for solar power

? Welding

? Industrial technology


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