IRG8CH42K10F
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- Mfr.Part #
- IRG8CH42K10F
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT 1200V 40A DIE
- Stock
- 47,599
- In Stock ：
- 47,599
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Mounting Type :
- Surface Mount
- Package / Case :
- Die
- Mount :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Packaging :
- Bulk
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 40A
- Td (on/off) @ 25°C :
- 40ns/240ns
- Operating Temperature :
- -40°C~175°C TJ
- Collector Emitter Voltage (VCEO) :
- 2V
- Test Condition :
- 600V, 40A, 5 Ω, 15V
- Input Type :
- Standard
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Gate Charge :
- 230nC
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Gate-Emitter Voltage-Max :
- 30V
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- RoHS Status :
- RoHS Compliant
- Datasheets
- IRG8CH42K10F
IRG8CH42K10F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG8CH42K10F Description
IRG8CH42K10F transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG8CH42K10F MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG8CH42K10F has the common source configuration.
IRG8CH42K10F Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG8CH42K10F Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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