IRG8CH15K10F

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Mfr.Part #
IRG8CH15K10F
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT 1200V ULTRA FAST DIE
Stock
31,566
In Stock :
31,566

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Package / Case :
Die
Gate-Emitter Voltage-Max :
30V
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 10A
Gate Charge :
65nC
Mount :
Surface Mount
Input Type :
Standard
Td (on/off) @ 25°C :
15ns/170ns
Voltage - Collector Emitter Breakdown (Max) :
1200V
Moisture Sensitivity Level (MSL) :
Not Applicable
RoHS Status :
RoHS Compliant
Collector Emitter Voltage (VCEO) :
2V
Packaging :
Bulk
Mounting Type :
Surface Mount
Test Condition :
600V, 10A, 10 Ω, 15V
Gate-Emitter Thr Voltage-Max :
6.5V
Operating Temperature :
-40°C~175°C TJ
Collector Emitter Breakdown Voltage :
1.2kV
Polarity/Channel Type :
N-Channel
Datasheets
IRG8CH15K10F
Introducing Transistors - IGBTs - Single Infineon Technologies IRG8CH15K10F from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:Die, Mounting Type:Surface Mount, Operating Temperature:-40°C~175°C TJ, IRG8CH15K10F pinout, IRG8CH15K10F datasheet PDF, IRG8CH15K10F amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG8CH15K10F ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG8CH15K10F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG8CH15K10F Description


The IRG8CH15K10F is an IGBT 1200 V Surface Mount Die. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.



IRG8CH15K10F Features


  • VCES = 1200V

  • IC(Nominal) = 10A

  • TJ(max) = 175°C

  • VCE(on) typ = 1.7V @ IC= 10A

  • Low VCE(on) Trench IGBT Technology

  • Low Switching Losses

  • Very Soft Turn-off Characteristics

  • 10μs Short Circuit SOA

  • Square RBSOA

  • Tight Parameter Distribution

  • Positive VCE(on) Temperature Coefficient



IRG8CH15K10F Applications


  • Industrial Motor Drives

  • UPS

  • HEV Inverter

  • Welding


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