IRG8CH10K10F
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- Mfr.Part #
- IRG8CH10K10F
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT 1200V 5A DIE
- Stock
- 47,111
- In Stock ：
- 47,111
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Operating Temperature :
- -40°C~175°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 2V
- Gate Charge :
- 30nC
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Package / Case :
- Die
- Supplier Device Package :
- Die
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 5A
- Td (on/off) @ 25°C :
- 20ns/160ns
- Test Condition :
- 600V, 5A, 47Ohm, 15V
- RoHS Status :
- RoHS Compliant
- Datasheets
- IRG8CH10K10F
IRG8CH10K10F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG8CH10K10F Description
IRG8CH10K10F is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its 10 μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tight parameter distribution. A maximum junction temperature of 175°C ensures increased reliability.
IRG8CH10K10F Features
10μs short circuit SOA
Square RBSOA
Positive VCE(ON) temperature coefficient
Low VCE(ON) and switching losses
Tight parameter distribution
IRG8CH10K10F Applications
Industrial motor drives
UPS
HEV inverter
Welding
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