IRG8CH20K10F

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Mfr.Part #
IRG8CH20K10F
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT 1200V ULTRA FAST DIE
Stock
49,332
In Stock :
49,332

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Gate Charge :
90nC
Package / Case :
Die
Input Type :
Standard
Reach Compliance Code :
Unknown
Test Condition :
600V, 15A, 10 Ω, 15V
Mounting Type :
Surface Mount
Packaging :
Bulk
Gate-Emitter Thr Voltage-Max :
6.5V
Collector Emitter Breakdown Voltage :
1.2kV
Moisture Sensitivity Level (MSL) :
Not Applicable
Gate-Emitter Voltage-Max :
30V
Mount :
Surface Mount
Operating Temperature :
-40°C~175°C TJ
Polarity/Channel Type :
N-Channel
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 15A
RoHS Status :
RoHS Compliant
Td (on/off) @ 25°C :
20ns/170ns
Voltage - Collector Emitter Breakdown (Max) :
1200V
Collector Emitter Voltage (VCEO) :
2V
Datasheets
IRG8CH20K10F
Introducing Transistors - IGBTs - Single Infineon Technologies IRG8CH20K10F from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:Die, Mounting Type:Surface Mount, Operating Temperature:-40°C~175°C TJ, IRG8CH20K10F pinout, IRG8CH20K10F datasheet PDF, IRG8CH20K10F amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG8CH20K10F ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG8CH20K10F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG8CH20K10F Description


The IRG8CH20K10F is an N-Channel insulated gate bipolar transistor. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.



IRG8CH20K10F Features


  • VCES = 1200V

  • IC(Nominal) = 15A

  • TJ(max) = 175°C

  • VCE(on) typ = 1.7V @ IC= 15A

  • Low VCE(on) Trench IGBT Technology

  • Low Switching Losses

  • Very Soft Turn-off Characteristics

  • 10μs Short Circuit SOA

  • Square RBSOA

  • Positive VCE(on) Temperature Coefficient 



IRG8CH20K10F Applications


  • Industrial Motor Drives

  • UPS 

  • HEV Inverter 

  • Welding


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