IRG8CH37K10F
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- Mfr.Part #
- IRG8CH37K10F
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- IGBT 1200V 100A DIE
- Stock
- 27,775
- In Stock ：
- 27,775
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Td (on/off) @ 25°C :
- 35ns/190ns
- Gate-Emitter Voltage-Max :
- 30V
- Collector Current-Max (IC) :
- 35A
- ECCN Code :
- EAR99
- Factory Lead Time :
- 16 Weeks
- Gate Charge :
- 210nC
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Test Condition :
- 600V, 35A, 5 Ω, 15V
- Operating Temperature (Max) :
- 175°C
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 35A
- Input Type :
- Standard
- Published :
- 2015
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IRG8CH37K10F
IRG8CH37K10F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG8CH37K10F Description
IRG8CH37K10F is a single IGBT with a break down voltage of 1200V from Infineon Technologies. IRG8CH37K10F operates between -40°C~175°C TJ, and its maximum collector current is 100A. The IRG8CH37K10F has three pins and it is available in Tape & Reel (TR) packaging way. IRG8CH37K10F has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
IRG8CH37K10F Features
-
Gate-Emitter Voltage-Max: 30V
-
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
-
Voltage - Collector Emitter Breakdown (Max): 1200V
-
Gate-Emitter Thr Voltage-Max: 6.5V
-
Test Condition: 600V, 35A, 5 Ω, 15V
IRG8CH37K10F Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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