IRG8CH29K10F

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Mfr.Part #
IRG8CH29K10F
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT 1200V ULTRA FAST DIE
Stock
34,422
In Stock :
34,422

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Moisture Sensitivity Level (MSL) :
Not Applicable
Operating Temperature :
-40°C~175°C TJ
Package / Case :
Die
Collector Emitter Breakdown Voltage :
1.2kV
Test Condition :
600V, 25A, 10 Ω, 15V
Gate-Emitter Thr Voltage-Max :
6.5V
RoHS Status :
RoHS Compliant
Collector Current-Max (IC) :
25A
Mounting Type :
Surface Mount
Packaging :
Bulk
Collector Emitter Voltage (VCEO) :
2V
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 25A
Td (on/off) @ 25°C :
40ns/245ns
Gate-Emitter Voltage-Max :
30V
Gate Charge :
160nC
Mount :
Surface Mount
Input Type :
Standard
Voltage - Collector Emitter Breakdown (Max) :
1200V
Polarity/Channel Type :
N-Channel
Datasheets
IRG8CH29K10F
Introducing Transistors - IGBTs - Single Infineon Technologies IRG8CH29K10F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~175°C TJ, Package / Case:Die, Mounting Type:Surface Mount, IRG8CH29K10F pinout, IRG8CH29K10F datasheet PDF, IRG8CH29K10F amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG8CH29K10F ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG8CH29K10F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG8CH29K10F Description


IRG8CH29K10F is a type of insulated gate bipolar transistor that is designed based on low VCE (ON) trench IGBT technology. Due to its low switching losses, it is ideally suitable for a wide range of switching frequencies. Excellent current sharing in parallel operation can be ensured based on tight parameter distribution and positive VCE(on) temperature coefficient. Moreover, the IRG8CH29K10F IGBT is able to deliver very soft turn-off characteristics, 10μs short circuit SOA, and square RBSOA.



IRG8CH29K10F Features


Tight parameter distribution

Low VCE (ON) trench IGBT technology

Low switching losses

Square RBSOA

Positive VCE (ON) temperature coefficient



IRG8CH29K10F Applications


UPS

HEV inverter

Welding

Induction motor drives


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