IRFUC20PBF

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Mfr.Part #
IRFUC20PBF
Manufacturer
Vishay
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 600V 2A TO251AA
Stock
20,869
In Stock :
20,869

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
4.4 Ω @ 1.2A, 10V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Turn-Off Delay Time :
30 ns
Number of Pins :
3
Power Dissipation :
2.5W
Avalanche Energy Rating (Eas) :
74 mJ
Number of Terminations :
3
Turn On Delay Time :
10 ns
Pulsed Drain Current-Max (IDM) :
8A
Continuous Drain Current (ID) :
2A
Additional Feature :
AVALANCHE RATED
Weight :
329.988449mg
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
40
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Resistance :
4.4Ohm
Peak Reflow Temperature (Cel) :
260
Packaging :
Tube
Number of Channels :
1
Element Configuration :
Single
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
2A
Published :
2010
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
600V
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
FET Type :
N-Channel
Power Dissipation-Max :
2.5W Ta 42W Tc
Length :
6.73mm
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Threshold Voltage :
4V
Fall Time (Typ) :
25 ns
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Transistor Element Material :
SILICON
Width :
2.39mm
Radiation Hardening :
No
Height :
6.22mm
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
4V @ 250µA
Factory Lead Time :
8 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Pin Count :
3
Case Connection :
DRAIN
Rise Time :
23ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Datasheets
IRFUC20PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFUC20PBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Number of Terminations:3, Number of Channels:1, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IRFUC20PBF pinout, IRFUC20PBF datasheet PDF, IRFUC20PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFUC20PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFUC20PBF


N-Channel Tube 4.4 Ω @ 1.2A, 10V ±20V 350pF @ 25V 18nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

IRFUC20PBF Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 74 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 8A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFUC20PBF Features


the avalanche energy rating (Eas) is 74 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 8A.
a threshold voltage of 4V


IRFUC20PBF Applications


There are a lot of Vishay Siliconix
IRFUC20PBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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