IRFUC20

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta 42W Tc

Turn On Delay Time :

10 ns

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Height :

6.22mm

Fall Time (Typ) :

25 ns

Rise Time :

23ns

Continuous Drain Current (ID) :

2A

Published :

2016

Number of Elements :

1

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

8A

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Terminal Finish :

TIN LEAD

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

4.4 Ω @ 1.2A, 10V

Length :

6.73mm

Transistor Application :

SWITCHING

FET Type :

N-Channel

JESD-609 Code :

e0

Packaging :

Tube

Width :

2.39mm

Peak Reflow Temperature (Cel) :

240

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

2A

DS Breakdown Voltage-Min :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±20V

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Case Connection :

DRAIN

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Mount :

Through Hole

Number of Terminations :

3

Weight :

329.988449mg

Turn-Off Delay Time :

30 ns

Avalanche Energy Rating (Eas) :

74 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V