IRFU9220PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-200V

Mount :

Through Hole

Continuous Drain Current (ID) :

3.6A

Height :

6.22mm

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.2A, 10V

Element Configuration :

Single

Resistance :

1.5Ohm

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

8.8 ns

Power Dissipation :

2.5W

Weight :

329.988449mg

Peak Reflow Temperature (Cel) :

260

Width :

2.38mm

Number of Pins :

3

Rise Time :

27ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Published :

2015

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Radiation Hardening :

No

Length :

6.73mm

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Fall Time (Typ) :

19 ns

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Pbfree Code :

yes

Turn-Off Delay Time :

7.3 ns

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

Power Dissipation-Max :

2.5W Ta 42W Tc

Number of Elements :

1