IRFU9210

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 10V

Input Capacitance :

170pF

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

RoHS Status :

Non-RoHS Compliant

Turn On Delay Time :

8 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Number of Channels :

1

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Rds On Max :

3 Ω

Drain to Source Breakdown Voltage :

-200V

Weight :

329.988449mg

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

13 ns

Width :

2.38mm

FET Type :

P-Channel

Number of Pins :

3

Supplier Device Package :

TO-251AA

Turn-Off Delay Time :

11 ns

Height :

6.22mm

Element Configuration :

Single

Drain to Source Resistance :

3Ohm

Continuous Drain Current (ID) :

1.9A

Vgs (Max) :

±20V

Packaging :

Tube

Published :

2016

Length :

6.73mm

Rise Time :

12ns

Power Dissipation-Max :

2.5W Ta 25W Tc

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.1A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)