IRFU9120PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.4A, 10V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

22A

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Weight :

329.988449mg

Current Rating :

-5.6A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

100V

Width :

2.39mm

Height :

6.22mm

Pin Count :

3

Power Dissipation-Max :

2.5W Ta 42W Tc

Continuous Drain Current (ID) :

-5.6A

Turn On Delay Time :

9.6 ns

Number of Terminations :

3

Threshold Voltage :

-4V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

REACH SVHC :

Unknown

JESD-609 Code :

e3

Radiation Hardening :

No

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

31 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

-100V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation :

2.5W

Element Configuration :

Single

Lead Free :

Lead Free

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

21 ns

Lead Length :

9.65mm

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 25V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Rise Time :

47ns

Length :

6.73mm

Voltage - Rated DC :

-100V

Number of Channels :

1

Resistance :

600mOhm