IRFU9120NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Voltage - Rated DC :

-100V

Turn-Off Delay Time :

28 ns

Rds On (Max) @ Id, Vgs :

480m Ω @ 3.9A, 10V

Mount :

Through Hole

Rise Time :

47ns

Fall Time (Typ) :

31 ns

Drain to Source Breakdown Voltage :

-100V

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

REACH SVHC :

No SVHC

Published :

1998

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Lead Free :

Lead Free

Series :

HEXFET®

Power Dissipation :

39W

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Nominal Vgs :

-4 V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Number of Pins :

3

Length :

6.7056mm

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Width :

2.3876mm

FET Type :

P-Channel

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Number of Terminations :

3

Power Dissipation-Max :

40W Tc

Height :

6.22mm

Continuous Drain Current (ID) :

-6.6A

Drain Current-Max (Abs) (ID) :

6.5A

Element Configuration :

Single

Current Rating :

-6.6A

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

26A

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Dual Supply Voltage :

-100V

Resistance :

480mOhm