IRFU9120N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain-source On Resistance-Max :

0.48Ohm

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

JESD-609 Code :

e0

Surface Mount :

No

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Published :

1998

Avalanche Energy Rating (Eas) :

100 mJ

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

245

Power Dissipation-Max :

40W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

6.6A

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

26A

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

480m Ω @ 3.9A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Series :

HEXFET®

FET Type :

P-Channel

DS Breakdown Voltage-Min :

100V

Packaging :

Tube

Number of Elements :

1

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V