IRFU9120
- Mfr.Part #
- IRFU9120
- Manufacturer
- Vishay
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 5.6A TO251AA
- Stock
- 28,544
- In Stock :
- 28,544
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 25 ns
- Packaging :
- Tube
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Voltage - Rated DC :
- -100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On Max :
- 600 mΩ
- Supplier Device Package :
- TO-251AA
- Turn On Delay Time :
- 9.6 ns
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Rise Time :
- 29ns
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 390pF @ 25V
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Number of Pins :
- 3
- Published :
- 2017
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Tc
- Number of Channels :
- 1
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- -100V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 21 ns
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 3.4A, 10V
- Drain to Source Resistance :
- 600mOhm
- Input Capacitance :
- 390pF
- FET Type :
- P-Channel
- Current Rating :
- -5.6A
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 100V
- Lead Free :
- Contains Lead
- Continuous Drain Current (ID) :
- 5.6A
- Power Dissipation :
- 2.5W
- Element Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Datasheets
- IRFU9120
P-Channel Tube 600mOhm @ 3.4A, 10V ±20V 390pF @ 25V 18nC @ 10V 100V TO-251-3 Short Leads, IPak, TO-251AA
IRFU9120 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 390pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5.6A.With a drain-source breakdown voltage of -100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 21 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 600mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFU9120 Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 600mOhm
a 100V drain to source voltage (Vdss)
IRFU9120 Applications
There are a lot of Vishay Siliconix
IRFU9120 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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