IRFU9110PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Length :

6.73mm

Width :

2.38mm

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Rise Time :

27ns

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Number of Channels :

1

Packaging :

Tube

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Factory Lead Time :

8 Weeks

FET Type :

P-Channel

Turn On Delay Time :

10 ns

Power Dissipation-Max :

2.5W Ta 25W Tc

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Element Configuration :

Single

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

-100V

Threshold Voltage :

-2V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Pbfree Code :

yes

REACH SVHC :

Unknown

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

Resistance :

1.2Ohm

Operating Temperature :

-55°C~150°C TJ

Height :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

329.988449mg

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1.9A, 10V

Power Dissipation :

2.5W

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Vgs (Max) :

±20V

Number of Terminations :

3

Transistor Application :

SWITCHING

Turn-Off Delay Time :

15 ns

Continuous Drain Current (ID) :

3.1A

Drain to Source Voltage (Vdss) :

100V

Fall Time (Typ) :

17 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2016