IRFU9024NPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Case Connection :

DRAIN

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Current Rating :

-1.6A

Voltage - Rated DC :

-60V

Number of Pins :

3

Nominal Vgs :

-4 V

Rds On (Max) @ Id, Vgs :

175m Ω @ 6.6A, 10V

Continuous Drain Current (ID) :

-11A

Height :

6.22mm

Power Dissipation :

38W

Drain to Source Breakdown Voltage :

-55V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Turn On Delay Time :

13 ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Termination :

Through Hole

Lead Free :

Contains Lead, Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Threshold Voltage :

-4V

Power Dissipation-Max :

38W Tc

Rise Time :

55ns

Number of Terminations :

3

Published :

1997

Packaging :

Tube

Drain to Source Voltage (Vdss) :

55V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Application :

SWITCHING

Width :

2.3876mm

Avalanche Energy Rating (Eas) :

62 mJ

JESD-609 Code :

e3

Dual Supply Voltage :

-55V

Turn-Off Delay Time :

23 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Resistance :

175mOhm

Element Configuration :

Single

Recovery Time :

71 ns

Fall Time (Typ) :

37 ns

Pulsed Drain Current-Max (IDM) :

44A

Radiation Hardening :

No

Length :

6.7056mm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier