IRFU9024NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Transistor Element Material :

SILICON

Resistance :

175mOhm

Number of Terminations :

3

Dual Supply Voltage :

-55V

FET Type :

P-Channel

Turn-Off Delay Time :

23 ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Voltage - Rated DC :

-60V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

62 mJ

Length :

6.7056mm

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

175m Ω @ 6.6A, 10V

Power Dissipation-Max :

38W Tc

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Width :

2.3876mm

Pulsed Drain Current-Max (IDM) :

44A

Drain to Source Breakdown Voltage :

-55V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Recovery Time :

71 ns

Nominal Vgs :

-4 V

Termination :

Through Hole

Number of Pins :

3

JESD-609 Code :

e3

Height :

6.22mm

Power Dissipation :

38W

Rise Time :

55ns

Packaging :

Tube

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

37 ns

Published :

1997

Drain to Source Voltage (Vdss) :

55V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Contains Lead, Lead Free

Current Rating :

-1.6A

Number of Elements :

1

Threshold Voltage :

-4V

Series :

HEXFET®

Continuous Drain Current (ID) :

-11A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Radiation Hardening :

No

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

13 ns