IRFU9024N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSIP-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

55V

JESD-609 Code :

e0

Avalanche Energy Rating (Eas) :

62 mJ

Drain-source On Resistance-Max :

0.175Ohm

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

11A

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

44A

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Packaging :

Tube

Mounting Type :

Through Hole

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

175m Ω @ 6.6A, 10V

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

Surface Mount :

No

RoHS Status :

Non-RoHS Compliant

Published :

1997

Additional Feature :

High Reliability

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Power Dissipation-Max :

38W Tc

Peak Reflow Temperature (Cel) :

245