IRFU9020PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

280m Ω @ 5.7A, 10V

Turn-Off Delay Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

9.9A Tc

Drain to Source Breakdown Voltage :

-50V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

-4 V

Power Dissipation :

42W

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Transistor Element Material :

SILICON

Power Dissipation-Max :

42W Tc

Mount :

Through Hole

Radiation Hardening :

No

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

9.9A

Weight :

329.988449mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins :

3

Factory Lead Time :

8 Weeks

Element Configuration :

Single

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.28Ohm

Number of Elements :

1

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

40A

Turn On Delay Time :

8.2 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

6.73mm

Mounting Type :

Through Hole

Published :

2016

Packaging :

Tube

Rise Time :

67ns

Pbfree Code :

yes

Width :

2.39mm

Fall Time (Typ) :

25 ns

Avalanche Energy Rating (Eas) :

250 mJ

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Height :

6.22mm

Drain to Source Voltage (Vdss) :

50V

Vgs (Max) :

±20V