IRFU9014PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Threshold Voltage :

-4V

Resistance :

500MOhm

Power Dissipation :

2.5W

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

2.5W Ta 25W Tc

Drain to Source Breakdown Voltage :

-60V

Radiation Hardening :

No

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Weight :

329.988449mg

Continuous Drain Current (ID) :

5.1A

Pulsed Drain Current-Max (IDM) :

20A

Turn On Delay Time :

11 ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Vgs (Max) :

±20V

Lead Length :

9.65mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Length :

6.73mm

Fall Time (Typ) :

31 ns

Terminal Finish :

Matte Tin (Sn)

Rise Time :

63ns

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

500m Ω @ 3.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

8 Weeks

Packaging :

Tube

REACH SVHC :

Unknown

Turn-Off Delay Time :

9.6 ns

Number of Terminations :

3

Pbfree Code :

yes

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

-4 V

Width :

2.39mm

Drain to Source Voltage (Vdss) :

60V

Element Configuration :

Single

JESD-609 Code :

e3

Number of Elements :

1

FET Type :

P-Channel

Height :

6.22mm

Transistor Application :

SWITCHING