IRFU9010PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Power Dissipation-Max :

25W Tc

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Rise Time :

47ns

Pulsed Drain Current-Max (IDM) :

21A

Operating Mode :

ENHANCEMENT MODE

Published :

2016

Case Connection :

DRAIN

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

ECCN Code :

EAR99

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

50V

Packaging :

Tube

Continuous Drain Current (ID) :

5.3A

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Fall Time (Typ) :

35 ns

Element Configuration :

Single

Mount :

Through Hole

Mounting Type :

Through Hole

Resistance :

500MOhm

Current Rating :

-5.3A

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

Turn On Delay Time :

6.1 ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

9.1nC @ 10V

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

500m Ω @ 2.8A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

13 ns