IRFU7440PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

6.22mm

Gate Charge (Qg) (Max) @ Vgs :

134nC @ 10V

Number of Elements :

1

FET Type :

N-Channel

Length :

6.73mm

Width :

2.39mm

Power Dissipation-Max :

140W Tc

Resistance :

2.4MOhm

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Threshold Voltage :

3V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Turn-Off Delay Time :

51 ns

Pulsed Drain Current-Max (IDM) :

760A

Rise Time :

39ns

Series :

HEXFET®

Continuous Drain Current (ID) :

90A

Element Configuration :

Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation :

140W

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 90A, 10V

Fall Time (Typ) :

34 ns

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Published :

2004

Number of Pins :

3

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

40V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4610pF @ 25V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tube

Mount :

Through Hole

Nominal Vgs :

3 V

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Turn On Delay Time :

11 ns

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Gate to Source Voltage (Vgs) :

20V