IRFU5505PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-55V

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

64A

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Published :

1997

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

20 ns

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Turn On Delay Time :

12 ns

Resistance :

110Ohm

Fall Time (Typ) :

16 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

-55V

Power Dissipation :

57W

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

-55V

Number of Terminations :

3

Length :

6.7056mm

Mounting Type :

Through Hole

Nominal Vgs :

-4 V

Radiation Hardening :

No

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-18A

Rds On (Max) @ Id, Vgs :

110m Ω @ 9.6A, 10V

Number of Pins :

3

FET Type :

P-Channel

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Peak Reflow Temperature (Cel) :

260

Current Rating :

-18A

Threshold Voltage :

-4V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Height :

6.22mm

Series :

HEXFET®

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

55V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Width :

2.3876mm

Rise Time :

28ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipation-Max :

57W Tc