IRFU5410PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Length :

6.7056mm

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

-4 V

Fall Time (Typ) :

46 ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

-13A

Drain to Source Breakdown Voltage :

-100V

Termination :

Through Hole

Drain-source On Resistance-Max :

0.205Ohm

Vgs (Max) :

±20V

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

58ns

Dual Supply Voltage :

-100V

Rds On (Max) @ Id, Vgs :

205m Ω @ 7.8A, 10V

Published :

1999

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2.3876mm

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

52A

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Threshold Voltage :

-4V

Turn On Delay Time :

15 ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Height :

6.22mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Turn-Off Delay Time :

45 ns

Power Dissipation :

66W

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Pitch :

2.28mm

Lead Length :

9.65mm

Voltage - Rated DC :

-100V

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Power Dissipation-Max :

66W Tc

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Radiation Hardening :

No

Current Rating :

-13A

Number of Elements :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Mount :

Through Hole

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

Number of Pins :

3

Series :

HEXFET®