IRFU5410

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

66W Tc

Avalanche Energy Rating (Eas) :

194 mJ

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Packaging :

Tube

FET Type :

P-Channel

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Pulsed Drain Current-Max (IDM) :

52A

Mounting Type :

Through Hole

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Published :

1999

Drain-source On Resistance-Max :

0.205Ohm

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

13A

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

205m Ω @ 7.8A, 10V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

13A Tc