IRFU5305PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Published :

2004

Turn On Delay Time :

14 ns

Fall Time (Typ) :

63 ns

Number of Elements :

1

Lead Free :

Contains Lead, Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Turn-Off Delay Time :

39 ns

Voltage - Rated DC :

-55V

Series :

HEXFET®

Element Configuration :

Single

Current Rating :

-28A

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Lead Length :

9.65mm

Peak Reflow Temperature (Cel) :

260

Lead Pitch :

2.28mm

Resistance :

65mOhm

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Avalanche Energy Rating (Eas) :

280 mJ

Nominal Vgs :

-4 V

Continuous Drain Current (ID) :

-31A

Mount :

Through Hole

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

55V

Power Dissipation :

89W

Drain to Source Breakdown Voltage :

-55V

Rise Time :

66ns

FET Type :

P-Channel

ECCN Code :

EAR99

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

-4V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

110W Tc

Mounting Type :

Through Hole

Width :

2.3mm

Drain Current-Max (Abs) (ID) :

25A

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

6.1mm

Number of Pins :

3

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Length :

6.6mm