IRFU5305

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

55V

Pulsed Drain Current-Max (IDM) :

110A

Drain-source On Resistance-Max :

0.065Ohm

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

Additional Feature :

High Reliability

Terminal Finish :

Tin/Lead (Sn/Pb)

ECCN Code :

EAR99

FET Type :

P-Channel

Number of Elements :

1

Terminal Position :

Single

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

280 mJ

Power Dissipation-Max :

110W Tc

Published :

2000

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

DS Breakdown Voltage-Min :

55V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

JESD-609 Code :

e0

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

31A

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

245

Vgs(th) (Max) @ Id :

4V @ 250µA