IRFU48ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drain-source On Resistance-Max :

0.011Ohm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 25V

Pulsed Drain Current-Max (IDM) :

250A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Mounting Type :

Through Hole

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Series :

HEXFET®

JESD-30 Code :

R-PSIP-T3

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain Current-Max (Abs) (ID) :

42A

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 50μA

Power Dissipation-Max :

91W Tc

ECCN Code :

EAR99

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

DS Breakdown Voltage-Min :

55V

Surface Mount :

No

Drain to Source Voltage (Vdss) :

55V

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Avalanche Energy Rating (Eas) :

74 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

11m Ω @ 37A, 10V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON