IRFU4620PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

5V @ 100µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

24A

JESD-609 Code :

e3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Termination :

Through Hole

Element Configuration :

Single

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Rise Time :

22.4ns

FET Type :

N-Channel

Power Dissipation :

144W

Vgs (Max) :

±20V

Mount :

Through Hole

Dual Supply Voltage :

200V

Nominal Vgs :

5 V

Fall Time (Typ) :

14.8 ns

Series :

HEXFET®

Radiation Hardening :

No

Turn-Off Delay Time :

25.4 ns

Case Connection :

DRAIN

Turn On Delay Time :

13.4 ns

Rds On (Max) @ Id, Vgs :

78m Ω @ 15A, 10V

Power Dissipation-Max :

144W Tc

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

Drain-source On Resistance-Max :

0.078Ohm

Published :

2009

Lead Free :

Lead Free

Packaging :

Tube

Number of Elements :

1

Number of Pins :

3

Width :

6.22mm

Length :

6.73mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Height :

2.39mm

Transistor Application :

SWITCHING