IRFU4615PBF
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- Mfr.Part #
- IRFU4615PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 33A IPAK
- Stock
- 50,720
- In Stock ：
- 50,720
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 33A
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Dual Supply Voltage :
- 150V
- Termination :
- Through Hole
- Rise Time :
- 35ns
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1750pF @ 50V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Case Connection :
- DRAIN
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Mount :
- Through Hole
- Published :
- 2004
- Number of Pins :
- 3
- Power Dissipation :
- 144W
- Height :
- 6.22mm
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Fall Time (Typ) :
- 20 ns
- Series :
- HEXFET®
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 21A, 10V
- Length :
- 6.7056mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- FET Type :
- N-Channel
- Turn On Delay Time :
- 15 ns
- Number of Elements :
- 1
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Width :
- 2.39mm
- Turn-Off Delay Time :
- 25 ns
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 5V
- Drain-source On Resistance-Max :
- 0.042Ohm
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- 5 V
- Power Dissipation-Max :
- 144W Tc
- Drain to Source Breakdown Voltage :
- 150V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 3
- Datasheets
- IRFU4615PBF
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N-Channel Tube 42m Ω @ 21A, 10V ±20V 1750pF @ 50V 26nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU4615PBF Overview
The maximum input capacitance of this device is 1750pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 33A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFU4615PBF Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 25 ns
a threshold voltage of 5V
IRFU4615PBF Applications
There are a lot of Infineon Technologies
IRFU4615PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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