IRFU4510PBF
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- Mfr.Part #
- IRFU4510PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 56A IPAK
- Stock
- 2,220
- In Stock ：
- 2,220
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Continuous Drain Current (ID) :
- 56A
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 18 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3031pF @ 50V
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Packaging :
- Tube
- Fall Time (Typ) :
- 34 ns
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 81nC @ 10V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 13.9m Ω @ 38A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Nominal Vgs :
- 3 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Width :
- 2.39mm
- Length :
- 6.73mm
- Power Dissipation :
- 143W
- Published :
- 2012
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Height :
- 6.22mm
- Power Dissipation-Max :
- 143W Tc
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 42 ns
- Pulsed Drain Current-Max (IDM) :
- 252A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRFU4510PBF
N-Channel Tube 13.9m Ω @ 38A, 10V ±20V 3031pF @ 50V 81nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU4510PBF Overview
A device's maximum input capacitance is 3031pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 56A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.Its maximum pulsed drain current is 252A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFU4510PBF Features
a continuous drain current (ID) of 56A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 252A.
IRFU4510PBF Applications
There are a lot of Infineon Technologies
IRFU4510PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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