IRFU4510PBF
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- Mfr.Part #
- IRFU4510PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 56A IPAK
- Stock
- 2,220
- In Stock ：
- 2,220
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 2.39mm
- Height :
- 6.22mm
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 3031pF @ 50V
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 18 ns
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 143W Tc
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 252A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 143W
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 34 ns
- Mounting Type :
- Through Hole
- Published :
- 2012
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 56A
- Series :
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 81nC @ 10V
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 42 ns
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Length :
- 6.73mm
- Rds On (Max) @ Id, Vgs :
- 13.9m Ω @ 38A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Nominal Vgs :
- 3 V
- Datasheets
- IRFU4510PBF
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N-Channel Tube 13.9m Ω @ 38A, 10V ±20V 3031pF @ 50V 81nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU4510PBF Overview
A device's maximum input capacitance is 3031pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 56A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.Its maximum pulsed drain current is 252A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFU4510PBF Features
a continuous drain current (ID) of 56A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 252A.
IRFU4510PBF Applications
There are a lot of Infineon Technologies
IRFU4510PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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