IRFU430APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.7 Ω @ 3A, 10V

Element Configuration :

Single

Turn On Delay Time :

8.7 ns

Continuous Drain Current (ID) :

5A

Weight :

329.988449mg

Pulsed Drain Current-Max (IDM) :

20A

Radiation Hardening :

No

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Length :

6.73mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs (Max) :

±30V

Number of Pins :

3

Fall Time (Typ) :

16 ns

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

500V

RoHS Status :

ROHS3 Compliant

Width :

2.39mm

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Rise Time :

27ns

Power Dissipation-Max :

110W Tc

REACH SVHC :

Unknown

Factory Lead Time :

11 Weeks

Mounting Type :

Through Hole

Resistance :

1.7Ohm

Current Rating :

5A

Threshold Voltage :

4.5V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Turn-Off Delay Time :

17 ns

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

110W

Published :

2008

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

5A

Case Connection :

DRAIN

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Elements :

1

FET Type :

N-Channel

Height :

6.22mm

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

500V