IRFU422

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN LEAD

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

4 Ω

Surface Mount :

No

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Pbfree Code :

No

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

500 V

JESD-609 Code :

e0

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2.2A (Tc)

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

4Ohm @ 1.3A, 10V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

210 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-251AA

Package :

Bulk

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

7 A

Configuration :

SINGLE WITH BUILT-IN DIODE

Manufacturer :

Rochester Electronics LLC

Input Capacitance (Ciss) (Max) @ Vds :

350 pF @ 25 V

Qualification Status :

COMMERCIAL

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 10 V

Supplier Device Package :

I-PAK

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Element Material :

SILICON

Power Dissipation (Max) :

50W (Tc)

DS Breakdown Voltage-Min :

500 V

Vgs (Max) :

±20V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Terminals :

3

Polarity/Channel Type :

N-Channel