IRFU4105ZPBF
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- Mfr.Part #
- IRFU4105ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 30A IPAK
- Stock
- 20,731
- In Stock ：
- 20,731
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 740pF @ 25V
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 24.5m Ω @ 18A, 10V
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 120A
- Continuous Drain Current (ID) :
- 30A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Termination :
- Through Hole
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.0245Ohm
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 6.1mm
- Published :
- 2003
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Case Connection :
- DRAIN
- Threshold Voltage :
- 4V
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Dual Supply Voltage :
- 55V
- Power Dissipation-Max :
- 48W Tc
- Lead Free :
- Lead Free
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins :
- 3
- Turn On Delay Time :
- 10 ns
- Current Rating :
- 30A
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 6.6mm
- Power Dissipation :
- 48W
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 55V
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HEXFET®
- RoHS Status :
- ROHS3 Compliant
- Lead Length :
- 9.65mm
- Turn-Off Delay Time :
- 26 ns
- Fall Time (Typ) :
- 24 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Number of Elements :
- 1
- Width :
- 2.3mm
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 55V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 29 mJ
- Nominal Vgs :
- 4 V
- Rise Time :
- 40ns
- Mount :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Lead Pitch :
- 2.28mm
- Recovery Time :
- 29 ns
- Datasheets
- IRFU4105ZPBF
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N-Channel Tube 24.5m Ω @ 18A, 10V ±20V 740pF @ 25V 27nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU4105ZPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 29 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 740pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26 ns.Peak drain current is 120A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFU4105ZPBF Features
the avalanche energy rating (Eas) is 29 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 120A.
a threshold voltage of 4V
IRFU4105ZPBF Applications
There are a lot of Infineon Technologies
IRFU4105ZPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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