IRFU4105PBF
- Mfr.Part #
- IRFU4105PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 27A IPAK
- Stock
- 25,547
- In Stock :
- 25,547
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 25V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Number of Pins :
- 3
- Current Rating :
- 27A
- Power Dissipation :
- 48W
- Lead Free :
- Lead Free
- Nominal Vgs :
- 4 V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Power Dissipation-Max :
- 68W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 27A
- Drain to Source Breakdown Voltage :
- 55V
- Length :
- 6.7056mm
- Series :
- HEXFET®
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 7 ns
- Published :
- 1998
- Height :
- 6.22mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Dual Supply Voltage :
- 55V
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 31 ns
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 16A, 10V
- Width :
- 2.3876mm
- Fall Time (Typ) :
- 40 ns
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Resistance :
- 45Ohm
- Voltage - Rated DC :
- 55V
- Rise Time :
- 49ns
- Threshold Voltage :
- 4V
- Datasheets
- IRFU4105PBF
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N-Channel Tube 45m Ω @ 16A, 10V ±20V 700pF @ 25V 34nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU4105PBF Overview
The maximum input capacitance of this device is 700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 27A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 31 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFU4105PBF Features
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 31 ns
a threshold voltage of 4V
IRFU4105PBF Applications
There are a lot of Infineon Technologies
IRFU4105PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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