IRFU4104PBF
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- Mfr.Part #
- IRFU4104PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 42A IPAK
- Stock
- 21,006
- In Stock ：
- 21,006
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Termination :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- 40V
- Drain to Source Breakdown Voltage :
- 40V
- Series :
- HEXFET®
- Lead Pitch :
- 2.28mm
- Continuous Drain Current (ID) :
- 119A
- Height :
- 6.22mm
- Power Dissipation-Max :
- 140W Tc
- Vgs (Max) :
- ±20V
- Lead Length :
- 9.65mm
- Fall Time (Typ) :
- 36 ns
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 37 ns
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- FET Type :
- N-Channel
- Published :
- 2010
- Input Capacitance (Ciss) (Max) @ Vds :
- 2950pF @ 25V
- Recovery Time :
- 42 ns
- Mounting Type :
- Through Hole
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Turn On Delay Time :
- 17 ns
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 42A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 69ns
- Threshold Voltage :
- 4V
- Length :
- 6.7056mm
- Mount :
- Through Hole
- Nominal Vgs :
- 4 V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage - Rated DC :
- 40V
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Power Dissipation :
- 140W
- Current Rating :
- 119A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 89nC @ 10V
- REACH SVHC :
- No SVHC
- Width :
- 2.3876mm
- Datasheets
- IRFU4104PBF
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N-Channel Tube 5.5m Ω @ 42A, 10V ±20V 2950pF @ 25V 89nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IRFU4104PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2950pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 37 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFU4104PBF Features
a continuous drain current (ID) of 119A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 37 ns
a threshold voltage of 4V
IRFU4104PBF Applications
There are a lot of Infineon Technologies
IRFU4104PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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