IRFU3910PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

150 mJ

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Pins :

3

Termination :

Through Hole

REACH SVHC :

No SVHC

Turn-Off Delay Time :

37 ns

Lead Length :

9.65mm

Mounting Type :

Through Hole

Lead Pitch :

2.28mm

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

100V

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

16A

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.115Ohm

Voltage - Rated DC :

100V

Series :

HEXFET®

Current Rating :

16A

Drain Current-Max (Abs) (ID) :

15A

Packaging :

Tube

Qualification Status :

Not Qualified

Length :

6.7056mm

Width :

2.3876mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

60A

Power Dissipation :

52W

Factory Lead Time :

12 Weeks

Published :

1998

Case Connection :

DRAIN

Element Configuration :

Single

Fall Time (Typ) :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Number of Terminations :

3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rds On (Max) @ Id, Vgs :

115m Ω @ 10A, 10V

Rise Time :

27ns

Threshold Voltage :

4V

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Dual Supply Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

79W Tc

ECCN Code :

EAR99

Height :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

4 V

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Turn On Delay Time :

6.4 ns