IRFU3910

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Mounting Type :

Through Hole

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Drain Current-Max (Abs) (ID) :

16A

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Series :

HEXFET®

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.115Ohm

Vgs (Max) :

±20V

Surface Mount :

No

Published :

1998

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

Single

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

150 mJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rds On (Max) @ Id, Vgs :

115m Ω @ 10A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

79W Tc

Pulsed Drain Current-Max (IDM) :

60A

JESD-30 Code :

R-PSIP-T3