IRFU3711ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

93A Tc

Case Connection :

DRAIN

Power Dissipation :

79W

Threshold Voltage :

2V

Drain-source On Resistance-Max :

0.0057Ohm

Radiation Hardening :

No

Height :

6.22mm

Length :

6.7056mm

Fall Time (Typ) :

5.2 ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Series :

HEXFET®

Number of Elements :

1

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 15A, 10V

Number of Pins :

3

Avalanche Energy Rating (Eas) :

140 mJ

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Rise Time :

13ns

Recovery Time :

28 ns

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Nominal Vgs :

2 V

Element Configuration :

Single

Published :

2004

Vgs (Max) :

±20V

Number of Terminations :

3

Packaging :

Tube

Transistor Element Material :

SILICON

Current Rating :

93A

Vgs(th) (Max) @ Id :

2.45V @ 250μA

FET Type :

N-Channel

Voltage - Rated DC :

20V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

20V

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2160pF @ 10V

Power Dissipation-Max :

79W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Width :

2.3876mm

Turn On Delay Time :

12 ns

Turn-Off Delay Time :

15 ns

Continuous Drain Current (ID) :

93A