IRFU3711PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

110A

Supplier Device Package :

IPAK (TO-251)

Series :

HEXFET®

Rds On Max :

6.5 mΩ

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 15A, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

20V

Published :

2005

Lead Free :

Lead Free

Number of Pins :

3

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain to Source Voltage (Vdss) :

20V

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance :

2.98nF

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

Turn On Delay Time :

12 ns

Rise Time :

220ns

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

Packaging :

Tube

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Power Dissipation :

120W

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

100A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta 120W Tc

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

20V

Turn-Off Delay Time :

17 ns

Drain to Source Resistance :

8.5mOhm