IRFU3711

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

140 mJ

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

370A

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

2.5W Ta 120W Tc

Published :

2004

Series :

HEXFET®

Drain-source On Resistance-Max :

0.0057Ohm

Number of Terminations :

3

ECCN Code :

EAR99

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

Drain Current-Max (Abs) (ID) :

30A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3