IRFU3710Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Surface Mount :

No

Vgs (Max) :

±20V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

JESD-609 Code :

e0

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Peak Reflow Temperature (Cel) :

245

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2930pF @ 25V

Pulsed Drain Current-Max (IDM) :

220A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

18m Ω @ 33A, 10V

Power Dissipation-Max :

140W Tc

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.018Ohm

Additional Feature :

High Reliability

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

42A

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100V

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Published :

2006

Avalanche Energy Rating (Eas) :

150 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE