IRFU3709ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Mount :

Through Hole

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Turn On Delay Time :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

2330pF @ 15V

Power Dissipation :

79W

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Drain-source On Resistance-Max :

0.0065ohm

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

Lead Free :

Lead Free

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Packaging :

Tube

JESD-609 Code :

e3

Number of Elements :

1

Power Dissipation-Max :

79W Tc

Turn-Off Delay Time :

15 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Continuous Drain Current (ID) :

86A

Height :

2.39mm

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

86A Tc

Transistor Element Material :

SILICON

Nominal Vgs :

1.8 V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Element Configuration :

Single

Case Connection :

DRAIN

Fall Time (Typ) :

3.9 ns

Rise Time :

12ns

Vgs (Max) :

±20V

Voltage - Rated DC :

30V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current Rating :

86A

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Length :

6.73mm

Vgs(th) (Max) @ Id :

2.25V @ 250μA

REACH SVHC :

No SVHC

Width :

9.78mm

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)