IRFU3709

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-30 Code :

R-PSIP-T3

Drain Current-Max (Abs) (ID) :

86A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

340A

Number of Terminations :

3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 4.5V

Case Connection :

DRAIN

Power Dissipation-Max :

120W Tc

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

Published :

2001

Terminal Finish :

MATTE TIN OVER NICKEL

Drain-source On Resistance-Max :

0.0065ohm

Number of Elements :

1

Surface Mount :

No

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

100 mJ

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Series :

HEXFET®