IRFU3708PBF
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- Mfr.Part #
- IRFU3708PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 61A IPAK
- Stock
- 17,466
- In Stock ：
- 17,466
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 6.22mm
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±12V
- Current Rating :
- 61A
- Turn On Delay Time :
- 7.2 ns
- Length :
- 6.7056mm
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Drain to Source Breakdown Voltage :
- 30V
- Dual Supply Voltage :
- 30V
- Nominal Vgs :
- 2 V
- Threshold Voltage :
- 2V
- Power Dissipation-Max :
- 87W Tc
- Turn-Off Delay Time :
- 17.6 ns
- Published :
- 2000
- Mount :
- Through Hole
- Packaging :
- Tube
- Fall Time (Typ) :
- 3.7 ns
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 30V
- FET Type :
- N-Channel
- Rise Time :
- 50ns
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Width :
- 2.3876mm
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2417pF @ 15V
- Resistance :
- 12.5Ohm
- Continuous Drain Current (ID) :
- 61A
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 4.5V
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- Gate to Source Voltage (Vgs) :
- 12V
- Power Dissipation :
- 87W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 15A, 10V
- Lead Free :
- Lead Free
- Datasheets
- IRFU3708PBF
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N-Channel Tube 12.5m Ω @ 15A, 10V ±12V 2417pF @ 15V 24nC @ 4.5V TO-251-3 Short Leads, IPak, TO-251AA
IRFU3708PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2417pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 17.6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7.2 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.In addition to reducing power consumption, this device uses drive voltage (2.8V 10V).
IRFU3708PBF Features
a continuous drain current (ID) of 61A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17.6 ns
a threshold voltage of 2V
IRFU3708PBF Applications
There are a lot of Infineon Technologies
IRFU3708PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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