IRFU3707PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Input Capacitance :

1.99nF

Turn On Delay Time :

78 ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

61A

Packaging :

Tube

Power Dissipation-Max :

87W Tc

Element Configuration :

Single

Rise Time :

78ns

Voltage - Rated DC :

30V

Dual Supply Voltage :

30V

Min Operating Temperature :

-55°C

Threshold Voltage :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

IPAK (TO-251)

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Fall Time (Typ) :

3.3 ns

Rds On (Max) @ Id, Vgs :

13mOhm @ 15A, 10V

Rds On Max :

13 mΩ

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

11.8 ns

Mount :

Through Hole

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 15V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Max Operating Temperature :

175°C

Vgs (Max) :

±20V

Power Dissipation :

87W

Number of Pins :

4

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Resistance :

13Ohm

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current Rating :

61A

Number of Elements :

1

Drain to Source Resistance :

17.5mOhm

Lead Free :

Lead Free

Published :

2000

Nominal Vgs :

3 V