IRFU3707

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN OVER NICKEL

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0095Ohm

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

220A

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Avalanche Energy Rating (Eas) :

42 mJ

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

30A

Power Dissipation-Max :

87W Tc

Number of Elements :

1

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

13m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 15V

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Number of Terminations :

3

Surface Mount :

No

Qualification Status :

Not Qualified

Published :

2000

Packaging :

Tube

FET Type :

N-Channel