IRFU3706PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

9mOhm @ 15A, 10V

RoHS Status :

RoHS Compliant

Supplier Device Package :

IPAK (TO-251)

Lead Free :

Lead Free

Rise Time :

87ns

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain to Source Resistance :

11mOhm

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Published :

2004

Packaging :

Tube

Gate to Source Voltage (Vgs) :

12V

Series :

HEXFET®

Drain to Source Breakdown Voltage :

20V

Rds On Max :

9 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain to Source Voltage (Vdss) :

20V

Mount :

Through Hole

Fall Time (Typ) :

4.8 ns

Power Dissipation-Max :

88W Tc

Turn-Off Delay Time :

17 ns

Mounting Type :

Through Hole

Voltage - Rated DC :

20V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Number of Pins :

3

Input Capacitance :

2.41nF

Current Rating :

75A

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Max Operating Temperature :

175°C

Min Operating Temperature :

-55°C

Power Dissipation :

88W

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 10V

Vgs (Max) :

±12V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

75A